STW50N10 n - channel enhancement mode power mos transistor n typical r ds(on) = 0.027 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n high current capability n 175 o c operating temperature n application oriented characterization applications n high current, high speed switching n power motor control n dc-dc & dc-ac converters n syncronous rectification internal schematic diagram january 1998 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 100 v v dgr drain- gate voltage (r gs =20k w ) 100 v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c50a i d drain current (continuous) at t c =100 o c35a i dm ( ? ) drain current (pulsed) 200 a p tot total dissipation at t c =25 o c 180 w derating factor 1.2 w/ o c t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area i sd 60 a, di/dt 200 a/ m s, v dd v (br)dss ,t j t jmax type v dss r ds(on) i d STW50N10 100 v < 0.035 w 50 a to-247 1 2 3 1/8 .com .com .com 4 .com u datasheet
thermal data r thj-case r t hj- amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 0.83 30 0.1 300 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d <1%) 50 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =25v) 400 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 100 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c =125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =250 m a 234v r ds(on) static drain-source on resistance v gs =10v i d = 25 a 0.027 0.035 w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 50 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =25a 20 45 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 4100 600 150 5200 800 200 pf pf pf STW50N10 2/8 .com .com .com .com 4 .com u datasheet
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =50v i d =25a r g =4.7 w v gs =10v 25 75 35 105 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =80v i d =50a v gs = 10 v 120 20 50 170 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =80v i d =50a r g =4.7 w v gs =10v 30 35 65 45 50 95 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 50 200 a a v sd ( * ) forward on voltage i sd =50a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 50 a di/dt = 100 a/ m s v dd =30v t j =150 o c 200 1.4 14 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area ( 1 )i sd 60 a, di/dt 200 a/ m s, v dd v (br)dss ,t j t jmax safe operating area thermal impedance STW50N10 3/8 .com .com .com .com 4 .com u datasheet
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STW50N10 4/8 .com .com .com .com 4 .com u datasheet
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature STW50N10 5/8 .com .com .com .com 4 .com u datasheet
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STW50N10 6/8 .com .com .com .com 4 .com u datasheet
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.413 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 dia 3.55 3.65 0.140 0.144 p025p to-247 mechanical data STW50N10 7/8 .com .com .com .com 4 .com u datasheet
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1998 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a ... STW50N10 8/8 .com .com .com 4 .com u datasheet
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